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Polar TM
Power MOSFET
IXTT170N10P
IXTQ170N10P
IXTK170N10P
V DSS
I D25
R DS(on)
= 100V
= 170A
≤ 9m Ω
N-Channel Enhancement Mode
TO-268 (IXTT)
Avalanche Rated
G
S
Tab
Symbol
V DSS
Test Conditions
T J = 25°C to 175°C
Maximum Ratings
100
V
TO-3P (IXTQ)
V DGR
V GSS
V GSM
T J = 25°C to 175°C, R GS = 1M Ω
Continuous
Transient
100
± 20
± 30
V
V
V
G
D
S
Tab
I D25
I L(RMS)
I DM
I A
T C = 25°C
External Lead Current Limit
T C = 25°C, Pulse Width Limited by T JM
T C = 25°C
170
160
350
60
A
A
A
A
TO-264 (IXTK)
E AS
dv/dt
P D
T C = 25°C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175°C
T C = 25°C
2
10
715
J
V/ns
W
G
D
S
Tab
T J
T JM
T stg
-55 to +175
+175
-55 to +175
°C
°C
°C
G = Gate
S = Source
D = Drain
Tab = Drain
T L
T SOLD
M d
Weight
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264 & TO-3P)
TO-268
TO-3P
TO-264
300
260
1.13/10
4.0
5.5
10.0
°C
°C
Nm/lb.in.
g
g
g
Features
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low R DS(ON) and Q G
Low Package Inductance
Advantages
Symbol Test Conditions
(T J = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
High Power Density
Easy to Mount
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 150°C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 15V, I D = 350A
100
2.5
7
V
5.0 V
±100 nA
25 μ A
250 μ A
9 m Ω
m Ω
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
? 2010 IXYS CORPORATION, All Rights Reserved
DS99176F(01/10)
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相关代理商/技术参数
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IXTT1N450HV 制造商:IXYS Corporation 功能描述:MOSFET N-CH 4500V 1A TO268
IXTT20N50D 功能描述:MOSFET 20 Amps 500V 0.33 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT20P50P 功能描述:MOSFET -20.0 Amps -500V 0.450 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT24N50Q 功能描述:MOSFET 24 Amps 500V 0.23 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT24P20 功能描述:MOSFET 24 Amps 200V 11 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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